Oxide Thin-Film Transistors: Introduction and a Review of Recent Advances

Namho Jeon

In this paper I review recent progress made in the area of materials, fabrication processes, device designs, and applications related to oxide thin-film transistors(TFTs), with an emphasis on papers published during last decade. Oxide semiconducting materials were first used as a active layer of TFTs in 1995 and there are exact properties of them and operating mechanisms as a active material of TFTs since history of them is quite short. Some earlier papers that played an important role in shaping the oxide TFT field are included, and a number of previously published review papers that cover that early period more completely are referenced. Markets are requires ultimate optoelectronics and displays with low cost, transparent and flexible TFT devices. It is forecasted that oxide TFTs lead new explosive growth in the next generation of display. Oxide TFTs have a lot of beauty points to realize the ultimate optoelectronics and displays but still have many challenges to overcome. New values of oxide TFTs can generate new applications.